NUMERICAL-ANALYSIS OF FLARED SEMICONDUCTOR-LASER AMPLIFIERS

被引：70

作者：

LANG, RJ

HARDY, A

PARKE, R

MEHUYS, D

OBRIEN, S

MAJOR, J

WELCH, D

机构：

[1] Spectra Diode Laboratories, San José, CA 95134

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical model for flared semiconductor optical amplifiers is presented that incorporates the effects of gain and index saturation and thermal effects. Theoretical near fields, far fields, and quadratically phase-corrected far fields are presented. The results indicate that flared semiconductor laser amplifiers are capable of coherent diffraction-limited out-put powers in excess of 1 W CW.

引用

页码：2044 / 2051

页数：8

共 21 条

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