CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY-GROWN CUINSE2 ON GAAS(001)

被引:12
作者
SHIODA, R
OKADA, Y
OYANAGI, H
NIKI, S
YAMADA, A
MAKITA, Y
机构
[1] Electrotechnical Laboratory, Tsukuba-shi, Ibaraki, 305
关键词
D O I
10.1016/0022-0248(95)80128-Y
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The structures of CuInSe2(CIS) grown on GaAs(001) by molecular beam epitaxy (MBE) were characterized by extended X-ray adsorption fine structure (EXAFS) for the local structure, changing the Cu/ln ratio systematically. Radial distributions around Cu and Se atoms change drastically as a function of the Cu/ln ratio, The results show that the ordered chalcopyrite phase is grown within a narrow composition range near the ideal stoichiometry. It is found that deviations from the stoichiometry in either direction cause a significant change in the local structure which results from the structural disorder and/or the phase separation. The temperature dependence of mean square relative displacement indicates the coexistence of Cu2Se in the Cu-rich region.
引用
收藏
页码:1196 / 1200
页数:5
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