LINEWIDTH ANALYSIS OF THE PHOTOLUMINESCENCE OF INXGA1-XAS/GAAS QUANTUM-WELLS (X=0.09, 0.18, 1.0)

被引：56

作者：

PATANE, A ^{[1
]}

POLIMENI, A ^{[1
]}

CAPIZZI, M ^{[1
]}

MARTELLI, F ^{[1
]}

机构：

[1] FDN UGO BORDONI,I-00142 ROME,ITALY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.52.2784

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence measurements have been performed at low temperature in InxGa1-xAs/GaAs quantum wells with different well widths, L, and indium concentrations, x. The dependence df the experimental linewidth of the heavy-hole-free-exciton recombination lines on L and x has been compared with existing models of interface and alloy disorder. It has been demonstrated that interface disorder has a crucial role at low L and high x. The estimated values of the interface-roughness size agree well with those found by different techniques.

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页码：2784 / 2788

页数：5

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