EXCITON PHOTOLUMINESCENCE LINEWIDTHS IN VERY NARROW ALGAAS/GAAS AND GAAS/INGAAS QUANTUM WELLS

被引：31

作者：

BERTOLET, DC ^{[1
]}

HSU, JK ^{[1
]}

LAU, KM ^{[1
]}

KOTELES, ES ^{[1
]}

OWENS, D ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6562 / 6564

页数：3

共 10 条

[1] ALGAAS GAAS QUANTUM-WELLS WITH HIGH CARRIER CONFINEMENT AND LUMINESCENCE EFFICIENCIES BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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[2] PSEUDOMORPHIC GAAS/INGAAS SINGLE QUANTUM WELLS BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (04) : 293 - 295
[3] BERTOLET DC, UNPUB
[4] STRUCTURAL-CHANGES OF THE INTERFACE, ENHANCED INTERFACE INCORPORATION OF ACCEPTORS, AND LUMINESCENCE EFFICIENCY DEGRADATION IN GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY UPON GROWTH INTERRUPTION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1014 - 1021
[5] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOCVD ALGAAS/GAAS SINGLE QUANTUM WELLS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 398 - 405
[6] THEORY OF PHOTOLUMINESCENCE LINE-SHAPE DUE TO INTERFACIAL QUALITY IN QUANTUM WELL STRUCTURES
SINGH, J
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 805 - 807
[7] ROLE OF INTERFACE ROUGHNESS AND ALLOY DISORDER IN PHOTOLUMINESCENCE IN QUANTUM-WELL STRUCTURES
SINGH, J
BAJAJ, KK
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5433 - 5437
[8] ATOMIC STEPS AT GALNAS/INP INTERFACES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
WANG, TY
FRY, KL
PERSSON, A
REIHLEN, EH
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (04) : 290 - 292
[9] Weisbuch C., 1981, I PHYS C SER, V56, P711
[10] LUMINESCENCE LINE-SHAPE BROADENING MECHANISMS IN GALNAS/ALLNAS QUANTUM WELLS
WELCH, DF
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EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 991 - 993

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