ATOMIC STEPS AT GALNAS/INP INTERFACES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:30
作者
WANG, TY [1 ]
FRY, KL [1 ]
PERSSON, A [1 ]
REIHLEN, EH [1 ]
STRINGFELLOW, GB [1 ]
机构
[1] UNIV UTAH,CTR MICROELECTR,SALT LAKE CITY,UT 84112
关键词
D O I
10.1063/1.99652
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:290 / 292
页数:3
相关论文
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