HIGH-TEMPERATURE OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INP MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：43

作者：

KAWAGUCHI, Y

ASAHI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 18期

关键词：

D O I：

10.1063/1.97922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1243 / 1245

页数：3

共 15 条

[1]

FUKUI T, 1985, I PHYS C SER, V74, P87

[2]

ISHIBASHI T, 1981, I PHYS C SER, V63, P587

[3] EXCITONIC ABSORPTION-SPECTRA OF GAAS-ALAS SUPERLATTICE AT HIGH-TEMPERATURE [J].

IWAMURA, H ;

KOBAYASHI, H ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10) :L795-L798

[4]

KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79

[5]

KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619

[6] OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INALAS MQW STRUCTURES AT ROOM-TEMPERATURE [J].

KAWAMURA, Y ;

WAKITA, K ;

ASAHI, H .

ELECTRONICS LETTERS, 1985, 21 (09) :371-373

[7] MONOLITHIC INTEGRATION OF INGAASP/INP DFB LASERS AND INGAAS/INAIAS MQW OPTICAL MODULATORS [J].

KAWAMURA, Y ;

WAKITA, K ;

ITAYA, Y ;

YOSHIKUNI, Y ;

ASAHI, H .

ELECTRONICS LETTERS, 1986, 22 (05) :242-243

[8] HIGH-TEMPERATURE HEAVY-HOLE AND LIGHT-HOLE EXCITONS AND WELL-WIDTH DEPENDENCE OF EXCITONS IN INGAAS/INALAS MULTIPLE-QUANTUM-WELL STRUCTURES [J].

KAWAMURA, Y ;

WAKITA, K ;

ASAHI, H .

ELECTRONICS LETTERS, 1985, 21 (24) :1168-1169

[9] ROOM-TEMPERATURE EXCITONS IN GA0.47IN0.53AS-INP SUPERLATTICES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

NAGLE, J ;

MAUREL, P ;

OMNES, F ;

POCHOLLE, JP .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1110-1111

[10] IN GAAS/INP SUPERLATTICE AVALANCHE PHOTODETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

PANISH, MB ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :859-861

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