PHOTOLUMINESCENCE INVESTIGATION OF INGAAS-INP QUANTUM-WELLS

被引：22

作者：

MORONI, D

ANDRE, JP

MENU, EP

GENTRIC, P

PATILLON, JN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2003 / 2008

页数：6

共 26 条

[1] GA1-XINXAS INP ABRUPT HETEROSTRUCTURES GROWN BY MOVPE AT ATMOSPHERIC-PRESSURE [J].

ANDRE, JP ;

MENU, EP ;

ERMAN, M ;

MEYNADIER, MH ;

NGO, T .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :71-74

[2]

BASTARD G, COMMUNICATION

[3]

BASTARD G, 1983, 1983 P NATO SCH MBE

[4] GROWTH OF HIGH-QUALITY GAINAS ON INP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CHAN, KT ;

ZHU, LD ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :44-46

[5]

CHARREAUX C, 1984, THESIS U LYON

[6] LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J].

CHRISTEN, J ;

BIMBERG, D ;

STECKENBORN, A ;

WEIMANN, G .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :84-86

[7] LOW-TEMPERATURE PHOTO-LUMINESCENCE AND ABSORPTION OF GAXIN1-XAS/INP [J].

GOETZ, KH ;

SOLOMONOV, AV ;

BIMBERG, D ;

JURGENSEN, H ;

RAZEGHI, M ;

SELDERS, J .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :383-383

[8]

GULDNER Y, 1980, PHYS REV LETT, V45, P110

[9] CHARACTERIZATION OF GAXIN1-XAS GROWN WITH TMIN [J].

KUO, CP ;

COHEN, RM ;

FRY, KL ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (03) :231-244

[10]

KUO CP, 1986, APPL PHYS LETT, V47, P855

← 1 2 3 →