COMPLETE CHARACTERIZATION OF EPITAXIAL CDTE ON GAAS FROM THE LATTICE GEOMETRICAL POINT-OF-VIEW

被引：2

作者：

MOCK, P

机构：

[1] Humboldt-Universität, Institut für Kristallographie und Materialforschung, O- 1040 Berlin

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90035-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The complete characterization of two monocrystalline samples of epitaxial CdTe(111) on GaAs(001) rotated 2-degrees around [110BAR] using a new description tool and X-ray techniques is given. In addition, the structural quality of the deposits was correlated to the angles of epitaxial misorientation.

引用

页码：165 / 167

页数：3

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