FERMI ENHANCEMENT AND BAND-GAP RENORMALIZATION OF ALXGA1-XAS/GAAS MODULATION-DOPED QUANTUM-WELLS

被引:24
作者
HAACKE, S
ZIMMERMANN, R
BIMBERG, D
KAL, H
MARS, DE
MILLER, JN
机构
[1] TECH UNIV BERLIN,INST FESTKORPERPHYS 1,HARDENBERGSTR 36,W-1000 BERLIN 12,GERMANY
[2] INST GRUNDLAGEN HALBLEIKRPHYS QUANTENSTRUTCTUREN,MAX PLANCK ARBEITSGRP,O-1086 BERLIN,GERMANY
[3] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 04期
关键词
D O I
10.1103/PhysRevB.45.1736
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A comparative study of photoluminescence and photoluminescence-excitation spectra of thin n- and p-type modulation-doped Al(x)Ga1-xAs/GaAs quantum wells is presented for sheet carrier densities up to 10(12) cm.2. Photoluminescence-excitation spectra reveal a rather weak enhancement of the oscillator strength at the Fermi edge which is not observable in the emission spectra. The renormalization of the quasi-two-dimensional band gap is obtained by comparison with undoped quantum wells of the same width. The experimental data compare favorably with our calculations of the band-gap renormalization within the local-density approximation as well as with the self-energy shifts of electron and hole subbands calculated within the random-phase approximation. The importance of a detailed line-shape analysis for the separation of intrinsic and extrinsic components in the photoluminescence spectra is emphasized.
引用
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页码:1736 / 1741
页数:6
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