JELLIUM SURFACES IN ALXGA1-XAS HETEROSTRUCTURES

被引:12
作者
ASMAR, NG
GWINN, EG
机构
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 08期
关键词
D O I
10.1103/PhysRevB.46.4752
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use self-consistent calculations to investigate the realization of jelliumlike surfaces at discontinuities in the curvature of two AlxGa1-xAs heterostructure wells. The first well, which has a parabolic center and linearly graded edges, is equivalent to a uniform slab of positive charge. The second, asymmetric well is equivalent to a positive background with an abrupt step in the density. In both structures, dipole layers at the discontinuities in the effective background charge produce steps in the total potential. Such wells provide an ideal laboratory for testing theories of surface response.
引用
收藏
页码:4752 / 4756
页数:5
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