QUENCHED-IN DEFECTS IN LASER ANNEALED SILICON

[1] ASADA K, UNPUB

[2] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[4] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 635 - 637

[5] WANG KL, 1978, J ELECTROCHEM SOC, V25, P1664

[6] WOOD RF, 1980, LASER ELECTRON BEAM, P37

[1] ASADA K, UNPUB

[2] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[4] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 635 - 637

[5] WANG KL, 1978, J ELECTROCHEM SOC, V25, P1664

[6] WOOD RF, 1980, LASER ELECTRON BEAM, P37