TEST STRUCTURES FOR PROPAGATION DELAY MEASUREMENTS ON HIGH-SPEED INTEGRATED-CIRCUITS

被引：4

作者：

LONG, SI

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1072 / 1076

页数：5

共 10 条

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[2]

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[3]

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[4]

LEE FS, 1982, IEEE J SOLID STATE C, V17, P1110

[5]

LEKAKIS E, 1983, JUN DEV RES C BURL

[6]

LOHSTROH J, 1979, IEEE J SOLID STATE C, V14, P592

[7] MSI HIGH-SPEED LOW-POWER GAAS INTEGRATED-CIRCUITS USING SCHOTTKY DIODE FET LOGIC [J].

LONG, SI ;

LEE, FS ;

ZUCCA, R ;

WELCH, BM ;

EDEN, RC .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) :466-472

[8]

Nakayama Y., 1983, 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, P48

[9]

NUZILLAT G, 1982, IEEE J SOLID STATE C, V17, P568

[10] PROCESS EVALUATION TEST STRUCTURES AND MEASUREMENT TECHNIQUES FOR A PLANAR GAAS DIGITAL IC TECHNOLOGY [J].

ZUCCA, R ;

WELCH, BM ;

LEE, CP ;

EDEN, RC ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) :2292-2298

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