EFFECT OF PROTON ISOLATION ON DC AND RF PERFORMANCE OF GAAS PLANAR-DOPED BARRIER DIODES

被引：15

作者：

HUTCHINSON, S ^{[1
]}

CARR, M ^{[1
]}

GWILLIAM, R ^{[1
]}

KELLY, MJ ^{[1
]}

SEALY, BJ ^{[1
]}

机构：

[1] GEC PLESSEY SEMICOND,LINCOLN LN6 3LF,ENGLAND

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 07期

关键词：

ION IMPLANTATION; PROTON EFFECTS; SCHOTTKY-BARRIER DIODES;

D O I：

10.1049/el:19950401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar doped barrier (PDB) diodes have been fabricated using both mesa and proton implant isolation. Comparative measurements of DC characteristics, RF noise figure and tangential sensitivity indicate that proton implant isolation gives devices of favourable performance following annealing at 290 degrees C for 20min, with the advantage of a planar process.

引用

页码：583 / 585

页数：3