Analysis of nonplanar topography effects of phase shift masks on imaging characteristics

被引：18

作者：

Terasawa, T ^{[1
]}

Hasegawa, N ^{[1
]}

Imai, A ^{[1
]}

Okazaki, S ^{[1
]}

机构：

[1] HITACHI LTD,SEMICOND DEV CTR,SEMICOND & INTEGRATED CIRCUITS DIV,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12B期

关键词：

optical lithography; phase-shift mask; KrF excimer laser; resolution; polarization; diffracted waves;

D O I：

10.1143/JJAP.34.6578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonplanar topography effects of phase shift masks (PSMs) on imaging characteristics are analyzed by using vector theory. Intensity distributions along the cross-sectional plane of the mask and image plane are calculated. The polarization effects of transverse electric (TE) and transverse magnetic (TM) aves are examined and the difference between the diffraction efficiency of TE waves and that of TM waves is evaluated. Imaging characteristics obtained using several types of alternate PSMs are examined, taking nonplanar topography effects into account, The lack of intensity balance between adjacent aperture images and asymmetry in the intensity with respect to the best focal plane are predicted by accurately calculating optical diffraction at the PSM. Also, 360 degrees phase shifting by fabricating a subtractive structure in a chromeless area is examined and is found to produce a dip in the image intensity; such a dip would not be predicted by conventional scalar theory.

引用

页码：6578 / 6583

页数：6

共 9 条

[1] 0.13 MU-M PATTERN DELINEATION USING KRF EXCIMER-LASER LIGHT [J].

IMAI, A ;

ASAI, N ;

UENO, T ;

HASEGAWA, N ;

TANAKA, T ;

TERASAWA, T ;

OKAZAKI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B) :6816-6822

[2]

Jain K., 1982, Microcircuit Engineering 82. International Conference on Microlithography, P69

[3]

Levenson M. D., 1982, IEEE T ELECTRON DEV, VED-29, P1812

[4] DIFFRACTION ANALYSIS OF DIELECTRIC SURFACE-RELIEF GRATINGS [J].

MOHARAM, MG ;

GAYLORD, TK .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1982, 72 (10) :1385-1392

[5]

Okazaki S., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P55, DOI 10.1109/IEDM.1991.235425

[6]

TERASAWA T, 1989, P SOC PHOTO-OPT INS, V1088, P25, DOI 10.1117/12.953131

[7] 2X2-PHASE MASK FOR ARBITRARY PATTERN-FORMATION [J].

WATANABE, H ;

PATI, YC ;

PEASE, RF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B) :6790-6795

[8] MASK TOPOGRAPHY EFFECTS IN PROJECTION PRINTING OF PHASE-SHIFTING MASKS [J].

WONG, AK ;

NEUREUTHER, AR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :895-902

[9] CALCULATION OF ONE-DIMENSIONAL LITHOGRAPHIC AERIAL IMAGES USING THE VECTOR THEORY [J].

YUAN, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (09) :1604-1613

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