TRANSPORT PROPERTY OF ZERO-GAP SEMICONDUCTORS UNDER TENSILE STRESS

被引：11

作者：

LIU, L ^{[1
]}

LEUNG, W ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT PHYS,EVANSTON,IL 60201

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.12.2336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2336 / 2345

页数：10

共 23 条

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