DETERMINATION OF THE CARRIER CONCENTRATION OF DOPED ZNSE FROM INFRARED MEASUREMENTS

被引：2

作者：

DENEUVILLE, A ^{[1
]}

TANNER, DB ^{[1
]}

PARK, RM ^{[1
]}

HOLLOWAY, PH ^{[1
]}

机构：

[1] UNIV FLORIDA, DEPT PHYS, GAINESVILLE, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1991年 / 9卷 / 03期

关键词：

D O I：

10.1116/1.577554

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Determination of the carrier concentration of n-type ZnSe/GaAs heteroepitaxial films from absorption measurements is reported over the wave number range 30 < W < 600 cm-1. Transmission and reflection curves are very sensitive to the doping level, n above 3X10(16) and 3X10(17) cm-3 levels, respectively. Absorption coefficients, alpha-f are derived from the transmitted intensities and vary between 500 and 14400 cm-1 in this wave number range. Around W = 100 cm-1, alpha-f varies as n1/2. This allows the determination of n from alpha-f. The alpha-f variations versus wave number and doping are compared to available models for various absorption processes.

引用

页码：949 / 953

页数：5

共 14 条

[1] SOME ELECTRICAL AND OPTICAL PROPERTIES OF ZNSE [J].