A SI BIPOLAR 21-GHZ 320-MW STATIC FREQUENCY-DIVIDER

被引：12

作者：

KURISU, M ^{[1
]}

OHUCHI, M ^{[1
]}

SAWAIRI, A ^{[1
]}

SUGIYAMA, M ^{[1
]}

TAKEMURA, H ^{[1
]}

TASHIRO, T ^{[1
]}

机构：

[1] NEC CORP LTD,DIV VLSI DEV DIV,DEPT DEVICE DEV,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 11期

关键词：

D O I：

10.1109/4.98982

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon bipolar divide-by-eight static frequency divider has been developed. A state-of-the-art advanced borosilicate-glass self-aligned (A-BSA) transistor technology is applied, which has a cutoff frequency of 40 GHz at V(ce) = 1 V. Optimum circuit and layout designs have been carried out for high-speed/low-power operation. The single-ended input realized by an on-chip metal-insulator-metal (MIM) capacitor makes it easy to use in microwave applications. Ultrahigh-speed operation, up to 21 GHz, was realized, with 320-mW power dissipation from a single +5-V supply. The static frequency divider is a suitable prescaler for phase-locked oscillators (PLO's), completely covering microwave frequencies from L band through Ku band (1-18 GHz). Future microwave and satellite communication systems are expected to be simplified by their use.

引用

页码：1626 / 1631

页数：6

共 17 条

[11]

SHINOZAKI S, 1989, SPR NAT C REC IEICE, P519

[12]

Sugiyama M., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P221, DOI 10.1109/IEDM.1989.74265

[13]

SUZUKI M, 1985, IEEE ELECTR DEVICE L, V6, P181, DOI 10.1109/EDL.1985.26089

[14]

TAKEMURA H, 1987, IEDM, P375, DOI DOI 10.1109/IEDM.1987.191435

[15]

WASHIO K, 1987, ISSCC, P58

[16]

WEGER P, 1989, ISSCC DIG TECH PAPER, P222

[17] 10.7GHZ FREQUENCY-DIVIDER USING DOUBLE-LAYER SILICON BIPOLAR PROCESS TECHNOLOGY [J].

WILSON, MC ;

HUNT, PC ;

DUNCAN, S ;

BAZLEY, DJ .

ELECTRONICS LETTERS, 1988, 24 (15) :920-922

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