DYNAMICS OF ELECTRIC-FIELD SCREENING IN A BULK GAAS MODULATOR

被引:28
作者
HEESEL, H
HUNSCHE, S
MIKKELSEN, H
DEKORSY, T
LEO, K
KURZ, H
机构
[1] Institut für Halbleitertechnik II, Rheinisch-Westfälische Technische Hochschule Aachen, W-5100 Aachen
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 23期
关键词
D O I
10.1103/PhysRevB.47.16000
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transient development of electric-field distributions in a biased GaAs film after low density optical excitation is determined by measurements of Franz-Keldysh modulations with a time resolution of 100 fs. The experimental results are compared with theoretical calculations. The transient field is calculated with a drift-diffusion model. Our calculation of the dielectric function of GaAs includes the Coulomb coupling and the electric field. The resulting optical transmission changes are calculated with a transfer-matrix method. The theory predicts a modification of the Franz-Keldysh modulation due to the nonuniform field, in quantitative agreement with the experimental observations.
引用
收藏
页码:16000 / 16003
页数:4
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