INTRINSIC FIELDS IN THIN INSULATING FILMS BETWEEN DISSIMILAR ELECTRODES

被引：88

作者：

SIMMONS, JG

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.10.10

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：10 / &

共 7 条

[1] ELECTRODE EFFECTS ON ALUMINUM OXIDE TUNNEL JUNCTIONS [J].

HANDY, RM .

PHYSICAL REVIEW, 1962, 126 (06) :1968-&

[2]

KANTER H, 1962, 22 C PHYS EL MASS IN

[3] ANOMALOUS CAPACITANCE OF THIN DIELECTRIC STRUCTURES [J].

MEAD, CA .

[4]

MEAD CA, 1960, P IRE, V48, P359

[5] OPERATION OF TUNNEL-EMISSION DEVICES [J].

MEAD, CA .

[6] MULTIPLE-HEATER TURRET FOR VAPOR DEPOSITION [J].

SIMMONS, JG ;

MOISTER, DE .

[7] HOT ELECTRONS IN METAL FILMS - INJECTION AND CCLLECTION [J].

SPRATT, JP ;

SCHWARZ, RF ;

KANE, WM .