MICROPROBE RAMAN ANALYSIS OF PICOSECOND LASER ANNEALED IMPLANTED SILICON

被引：32

作者：

NISSIM, YI

SAPRIEL, J

OUDAR, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：504 / 506

页数：3

共 17 条

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PLOOG, K .

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[2]

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[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

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PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[4] RAMAN MEASUREMENTS OF STRESS IN SILICON-ON-SAPPHIRE DEVICE STRUCTURES [J].

BRUECK, SRJ ;

TSAUR, BY ;

FAN, JCC ;

MURPHY, DV ;

DEUTSCH, TF ;

SILVERSMITH, DJ .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :895-898

[5]

BUCKSBAUM P, UNPUB

[6] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P .

PHYSICAL REVIEW LETTERS, 1982, 49 (03) :219-222

[7] RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J].

JUSSERAND, B ;

SAPRIEL, J .

PHYSICAL REVIEW B, 1981, 24 (12) :7194-7205

[8]

Kim D. M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P85

[9] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

BLOEMBERGEN, N ;

HODGSON, RT .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[10]

LIU PL, 1980, LASER ELECTRON BEAM, P156

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