GROWTH OF METASTABLE CU1-XCRX SOLID-SOLUTIONS BY ION MIXING DURING BIAS-SPUTTER DEPOSITION

被引：29

作者：

SHIN, SM ^{[1
]}

RAY, MA ^{[1
]}

RIGSBEE, JM ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：249 / 251

页数：3

共 8 条

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[2] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].

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APPLIED PHYSICS LETTERS, 1981, 38 (10) :773-775

[3] GROWTH AND THERMAL-STABILITY OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS [J].

CADIEN, KC ;

ELTOUKHY, AH ;

GREENE, JE .

VACUUM, 1981, 31 (06) :253-258

[4]

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[5] ION-BEAM INDUCED METASTABLE PT2SI3 PHASE .1. FORMATION, STRUCTURE, AND PROPERTIES [J].

TSAUR, BY ;

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TU, KN .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5326-5333

[6] CONTINUOUS SERIES OF METASTABLE AG-CU SOLID-SOLUTIONS FORMED BY ION-BEAM MIXING [J].

TSAUR, BY ;

LAU, SS ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :823-826

[7] GROWTH AND PHASE-STABILITY OF EPITAXIAL METASTABLE INSB1-XBIX FILMS ON GAAS .1. CRYSTAL-GROWTH [J].

ZILKO, JL ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1549-1559

[8]

1973, METALS HDB, V8

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