THERMAL CYCLE DEGRADATION OF CHARGE CARRIER LIFETIME AND RESISTIVITY IN SILICON

被引：7

作者：

WALTER, FJ

BATES, DD

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 03期

关键词：

D O I：

10.1109/TNS.1966.4324104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：231 / +

页数：1

共 44 条

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[5]

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[7] EFFECTIVE CHARGE CARRIER LIFETIME IN SILICON P-I-N JUNCTION DETECTORS [J].

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SWARTZENDRUBER, LJ .

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[8]

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[9] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].

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CARLSON, RO .

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[10]

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