RADIATION DAMAGE IN LITHIUM DRIFTED P-I-N JUNCTIONS

被引：21

作者：

COLEMAN, JA

RODGERS, JW

机构：

来源：

关键词：

D O I：

10.1109/TNS.1964.4323425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：213 / +

页数：1

共 27 条

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[2] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM
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[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 653 - &
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[6] BUCK TM, IN PRESS
[7] CRAWFORD JH, 1963, IEEE T NUCL SCI, VNS1, P1
[8] THICK JUNCTION RADIATION DETECTORS MADE BY ION DRIFT
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (01): : 60 - 66
[9] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON
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[10] GEBALLE TH, 1959, SEMICONDUCTORS, P313