共 16 条
- [1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710
- [2] THE SEMICONDUCTOR SURFACE BARRIER FOR NUCLEAR PARTICLE DETECTION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (02): : 205 - 226
- [3] THICK JUNCTION RADIATION DETECTORS MADE BY ION DRIFT [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 12 (01): : 60 - 66
- [4] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 21 - 24
- [5] FULLER SC, 1953, PHYS REV, V91, P193
- [6] DIFFUSED JUNCTION DEPLETION LAYER CALCULATIONS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (02): : 389 - 403
- [7] MAYER JW, 1961, MAY C NUCL EL BELGR
- [8] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35
- [9] DIFFUSION OF LI IN SI AT HIGH-T AND THE ISOTOPE EFFECT [J]. PHYSICAL REVIEW, 1960, 119 (03): : 1014 - 1021
- [10] STUDY OF LI-O INTERACTION IN SI BY ION DRIFT [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1048 - &