DENSITY-MEASUREMENT OF AMORPHOUS SIXGE1-X ALLOYS

被引：5

作者：

LAAZIRI, K ^{[1
]}

ROORDA, S ^{[1
]}

CLICHE, L ^{[1
]}

机构：

[1] UNIV MONTREAL,DEPT PHYS,RECH PHYS & TECHNOL COUCHES MINCES GRP,CP 6128 SUCC A,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 90卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95589-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The atomic density of amorphous SixGe1-x alloys (x = 1, 0.85, 0.67, 0.50, 0.20 and 0) has been measured. Mono-crystalline SixGe1-x layers were implanted with 1.50-2.75 MeV Si2+ and Ge2+ ions to produce the amorphous material. Using surface profilometry and RBS/channeling, it was found that amorphous alloys are less dense than the crystalline alloys, and that Vegard's law underestimates the a-SixGe1-x density.

引用

页码：438 / 441

页数：4

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