SERIES RESISTANCE OF IN-PLANE-GATED TRANSISTORS AND QUANTUM POINT CONTACTS

被引:4
作者
DEVRIES, DK [1 ]
WIECK, AD [1 ]
机构
[1] RUHR UNIV BOCHUM,LEHRSTUHL ANGEW FESTKORPERPHYS,D-44780 BOCHUM,GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期
关键词
D O I
10.1116/1.587953
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By using large-scale models made of conductive polyethylene, the series resistance of constrictions in a two-dimensional electron gas can be estimated without any computational effort.
引用
收藏
页码:394 / 395
页数:2
相关论文
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