ALGAN PN JUNCTIONS

被引：16

作者：

DMITRIEV, VA ^{[1
]}

IRVINE, K ^{[1
]}

CARTER, CH ^{[1
]}

ZUBRILOV, AS ^{[1
]}

TSVETKOV, DV ^{[1
]}

机构：

[1] AF IOFFE INST & CREE RES EED,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 01期

关键词：

D O I：

10.1063/1.115501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN pn homo- and heterojunctions were fabricated on silicon carbide substrates by metalorganic chemical vapor deposition. AlN concentration in AlGaN layers ranged from 2 to 8 mol %. Mesa structures were made by reactive ion etching. Electroluminescence (EL) from AlGaN pn junctions was studied. EL peaks associated with near band-to-band transition in AlGaN were detected. The minimum wavelength of EL peak of ∼348 nm (hν∼3.56 eV, 300 K) was measured for a p-Al0.08GaN0.92/n-Al0.06Ga 0.94N heterojunction. The dependence of the photon energy of the edge EL peak on AlN concentration in AlGaN was measured.© 1995 American Institute of Physics.

引用

页码：115 / 117

页数：3

共 21 条

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