EFFECTS OF SINGLE NEUTRON-INDUCED DISPLACEMENT CLUSTERS IN SPECIAL SILICON DIODES

被引：10

作者：

GERETH, R

HAITZ, RH

SMITS, FM

机构：

来源：

关键词：

D O I：

10.1063/1.1713967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3884 / &

共 22 条

[1]

[Anonymous], 1959, J APPL PHYS, V30, P1117

[2]

BILLINGTON DS, 1961, RADIATION DAMAGE SOL

[3]

FRYE GM, 1954, LA1670 LOS AL SCIENT

[4] MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA [J].

HAITZ, RH .

[5] MECHANISMS CONTRIBUTING TO NOISE PULSE RATE OF AVALANCHE DIODES [J].

HAITZ, RH .

[6] VARIATION OF JUNCTION BREAKDOWN VOLTAGE BY CHARGE TRAPPING [J].

HAITZ, RH .

PHYSICAL REVIEW, 1965, 138 (1A) :A260-&

[7]

HAITZ RH, 1964, 2 ANN SCIENT REP

[8]

HAITZ RH, 1964, B AM PHYS SOC, V9, P288

[9]

HAITZ RH, 1962, B AM PHYS SOC, V7, P536

[10]

HUEIN M, 1965, 7 INT C PHYS SEM