VARIATION OF JUNCTION BREAKDOWN VOLTAGE BY CHARGE TRAPPING

被引：33

作者：

HAITZ, RH

机构：

来源：

PHYSICAL REVIEW | 1965年 / 138卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.138.A260

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A260 / &

共 11 条

[1]

GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211

[2] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&

[3] AVALANCHE NOISE STUDY IN MICROPLASMAS AND UNIFORM JUNCTIONS [J].

HAITZ, RH ;

GOETZBERGER, A .

SOLID-STATE ELECTRONICS, 1963, 6 (06) :678-&

[4] MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA [J].

HAITZ, RH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1370-&

[5]

HAITZ RH, 1964, DA49186ORD1086

[6]

HAITZ RH, TO BE PUBLISHED

[7] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[8] THEORY OF MICROPLASMA INSTABILITY IN SILICON [J].

MCINTYRE, RJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :983-&

[9] AVALANCHE BREAKDOWN IN SILICON [J].

MCKAY, KG .

PHYSICAL REVIEW, 1954, 94 (04) :877-884

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

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