INVESTIGATIONS OF CONTACT RESISTANCE AND CARRIER MOBILITY IN EPITAXIAL N+-N STRUCTURES

被引：5

作者：

MOROZOV, BV

SKOK, EM

VELICHKO, AA

IVANOV, EV

GUTAI, L

MOJZES, I

机构：

[1] HUNGARIAN ACAD SCI,INST TECH PHYS,H-1088 BUDAPEST,HUNGARY

[2] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK,USSR

来源：

关键词：

D O I：

10.1016/0040-6090(76)90053-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：419 / 422

页数：4

共 6 条

[1] ANSELM AI, 1962, VVEDENIE TEORIYU POL
[2] BLOOD P, 1972, ACTA ELECTRONICS, V15, P33
[3] BLOOD P, 1971, J PHYS D, V4, P129
[4] DETERMINATION OF SEMICONDUCTOR-METAL CONTACT RESISTANCE BY AN ANGLE-DEPENDENT GEOMETRICAL MAGNETORESISTANCE METHOD
GUTAI, L
MOJZES, I
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (06) : 325 - 326
[5] GEOMETRICAL MAGNETORESISTANCE AND HALL MOBILITY IN GUNN EFFECT DEVICES
JERVIS, TR
JOHNSON, EF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 181 - &
[6] PECULIAR BEHAVIOR OF TRANSPORT-COEFFICIENTS IN PRESENCE OF INELASTIC-SCATTERING BY OPTICAL PHONONS
KRAVCHENKO, AF
KUBALKOVA, S
MOROZOV, BV
POLOVINKIN, VG
SKOK, EM
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1975, 72 (01): : 221 - 228