SIMULATION OF THE RECORDING PROCESS WITH A VSM ON CO-CR AND CO-NI-O LAYERS DEPOSITED AT OBLIQUE-INCIDENCE

被引:7
作者
BERNARDS, JPC
VANENGELEN, GJP
SCHRAUWEN, CPG
CRAMER, HAJ
LUITJENS, SB
机构
[1] Philips Research Laboratories, 5600 JA, Eindhoven
关键词
D O I
10.1109/20.104700
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The recording process on Co-Cr and Co-Ni-O layers deposited at oblique incidence is simulated with a vibrating sample magnetometer. The Co-Cr layers are deposited on Si substrates and have an easy magnetisation direction tilted 15° from the normal to the layer, which is caused by the presence of columnar shape anisotropy. The simulation experiments show that such a layer is more sensitive to one side of the perpendicular component of the write field of a ring head. The Co-Ni-O sample has an easy direction of magnetisation tilted about 20° out of the plane. The simulation experiments show that the steepness of the transition is different for the two directions of head movement. © 1990 IEEE
引用
收藏
页码:2289 / 2291
页数:3
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