SUB-MU-M WIDE CHANNELS WITH SURFACE-POTENTIAL COMPENSATED BY FOCUSED SI ION-BEAM IMPLANTATION

被引：9

作者：

FUJISAWA, T

SAKU, T

HIRAYAMA, Y

TARUCHA, S

机构：

[1] NTT Basic Research Laboratories, Midori-cho, Musashino-shi

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.109748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-mum to 5 mum wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3 x 10(5) cm2/V s and a ballistic length of 3.1 mum at 1.5 K.

引用

页码：51 / 53

页数：3

共 11 条

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