HIGH ELECTRON-MOBILITY IN ALGAAS/GAAS MODULATION-DOPED STRUCTURES

被引：56

作者：

SAKU, T

HIRAYAMA, Y

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 05期

关键词：

MBE; MODULATION-DOPED STRUCTURE; ELECTRON MOBILITY; BALLISTIC TRANSPORT;

D O I：

10.1143/JJAP.30.902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs/GaAs modulation-doped structures with low-temperature electron mobility exceeding 10(7) cm2/Vs at a carrier concentration of 2.5 approximately 3 x 10(11) cm-2 are grown by molecular beam epitaxy. Electron mobility above 8 x 10(6) cm2/Vs is reproducibly obtained over more than 6 months by careful baking of the growth system and optimization of the layer structure. Voltage-current measurements showing nonlinear and negative resistance characteristics at low temperatures indicate that the ballistic motion of electrons dominates the transport characteristics of these samples.

引用

页码：902 / 905

页数：4

共 13 条

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