HIGH-POWER CONTINUOUS-WAVE BLUE-LIGHT GENERATION IN KNBO3 USING SEMICONDUCTOR AMPLIFIER SEEDED BY A LASER-DIODE

被引:30
作者
GOLDBERG, L [1 ]
BUSSE, LE [1 ]
MEHUYS, D [1 ]
机构
[1] SDL INC,SAN JOSE,CA 95134
关键词
D O I
10.1063/1.110515
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diffraction limited emission of a GaAlAs tapered amplifier seeded by a laser diode is frequency doubled in a 12.4-mm-long KNbO3 crystal to generate 62 mW of 429 nm continuous wave emission, corresponding to a conversion efficiency of 1.1%/W cm. Reductions in the conversion efficiency due to nonuniform temperature distribution caused by blue-enhanced infrared absorption were characterized.
引用
收藏
页码:2327 / 2329
页数:3
相关论文
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