CALCULATION OF LOCAL-DENSITY OF STATES AT AN ATOMICALLY SHARP SI TIP

被引：11

作者：

HUANG, ZH ^{[1
]}

CUTLER, PH ^{[1
]}

MISKOVSKY, NM ^{[1
]}

SULLIVAN, TE ^{[1
]}

机构：

[1] TEMPLE UNIV,DEPT ELECT ENGN,PHILADELPHIA,PA 19122

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The local density of states (LDOS) at an atomically sharp Si tip is calculated using a tight-binding model. A pyramidal shaped cluster of ten layers is constructed to represent the tip. The top six layers are allowed to relax while the bottom four are fixed to simulate the bulk. The forces are calculated and used to optimize the atomic geometry. It is found that the LDOS of the topmost atom is significantly different than that in the bulk, and that it changes little with an applied bias. However, the topmost atom does not have any strongly localized occupied state, though there exists more localized p-type states above the highest occupied states. This suggests that the discrete character of the structure plays a significant role in determining the LDOS for an atomic size tip.

引用

页码：522 / 525

页数：4