SURFACE-DEFECTS ON SEMICONDUCTORS

被引：56

作者：

WILLIAMS, RH

机构：

来源：

SURFACE SCIENCE | 1983年 / 132卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(83)90535-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：122 / 142

页数：21

共 67 条

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES
ALLEN, RE
DOW, JD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387
[2] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[3] VALENCE BAND FORMATION IN SMALL SILVER CLUSTERS
APAI, G
LEE, ST
MASON, MG
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (03) : 213 - 217
[4] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[5] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[6] DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS
BAUER, RS
BACHRACH, RZ
HANSSON, GV
CHIARADIA, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 674 - 680
[7] ROOM-TEMPERATURE FORMATION OF THE AG/GAAS (110) INTERFACE
BOLMONT, D
CHEN, P
PROIX, F
SEBENNE, CA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (16): : 3639 - 3648
[8] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES
BRILLSON, LJ
MARGARITONDO, G
STOFFEL, NG
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670
[9] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
BRILLSON, LJ
BRUCKER, CF
KATNANI, AD
STOFFEL, NG
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666
[10] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841

← 1 2 3 4 5 6 7 →