MONTE-CARLO SIMULATION OF THE PHOTOELECTRON CROSSTALK IN SILICON IMAGING DEVICES

被引：30

作者：

LAVINE, JP

CHANG, WC

ANAGNOSTOPOULOS, CN

BURKEY, BC

NELSON, ET

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1109/T-ED.1985.22243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2087 / 2091

页数：5

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