RAPID SOLIDIFICATION STUDIES OF A MODEL ALLOY SYSTEM

被引：19

作者：

THOMPSON, MO

PEERCY, PS

TSAO, JY

AZIZ, MJ

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] OAK RIDGE NATL LAB,OAK RIDGE,TN 37831

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.97094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：558 / 560

页数：3

共 10 条

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[6] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

GALVIN, GJ ;

THOMPSON, MO ;

MAYER, JW ;

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PAULTER, N ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1982, 48 (01) :33-36

[7] THERMAL-CONDUCTIVITY OF AMORPHOUS-SILICON [J].

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01) :K31-K33

[8]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[9] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

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HESS, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :921-926

[10] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

GALVIN, GJ ;

MAYER, JW ;

PEERCY, PS ;

POATE, JM ;

JACOBSON, DC ;

CULLIS, AG ;

CHEW, NG .

PHYSICAL REVIEW LETTERS, 1984, 52 (26) :2360-2363

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