RESIDUAL PHOTOCURRENT DECAY IN AMORPHOUS CHALCOGENIDES

被引:76
作者
SHIMAKAWA, K
机构
[1] Gifu Univ, Dep of Electronics, Gifu,, Jpn, Gifu Univ, Dep of Electronics, Gifu, Jpn
关键词
D O I
10.1016/0022-3093(85)90885-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
10
引用
收藏
页码:1253 / 1256
页数:4
相关论文
共 10 条
[1]   PHOTOCONDUCTION IN METAL-DOPED GEYSE1-Y GLASSES [J].
CHAMBERLAIN, JM ;
MOSELEY, AJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :13-17
[2]   RECOMBINATION IN AMORPHOUS ARSENIC TRISELENIDE [J].
FUHS, W ;
MEYER, D .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 24 (01) :275-283
[3]  
Mott N. F., 1979, ELECT PROCESSES NONC
[4]   PHOTO-LUMINESCENCE DECAY IN AMORPHOUS AS2S3 [J].
MURAYAMA, K ;
NINOMIYA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L512-L514
[5]  
Ngai K. L., 1979, Comments on Solid State Physics, V9, P127
[6]   MODELS OF HIERARCHICALLY CONSTRAINED DYNAMICS FOR GLASSY RELAXATION [J].
PALMER, RG ;
STEIN, DL ;
ABRAHAMS, E ;
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1984, 53 (10) :958-961
[7]   NONEXPONENTIAL RELAXATION OF CONDUCTANCE NEAR SEMICONDUCTOR INTERFACES [J].
QUEISSER, HJ .
PHYSICAL REVIEW LETTERS, 1985, 54 (03) :234-236
[8]   EXCITON RECOMBINATION IN AMORPHOUS CHALCOGENIDES [J].
SHIMAKAWA, K .
PHYSICAL REVIEW B, 1985, 31 (06) :4012-4014
[9]   RESIDUAL PHOTOCURRENT DECAY IN HYDROGENATED AMORPHOUS-SILICON [J].
SHIMAKAWA, K ;
YANO, Y .
APPLIED PHYSICS LETTERS, 1984, 45 (08) :862-864
[10]   OPTICAL STUDIES OF EXCESS CARRIER RECOMBINATION IN A-SI-H - EVIDENCE FOR DISPERSIVE DIFFUSION [J].
VARDENY, Z ;
OCONNOR, P ;
RAY, S ;
TAUC, J .
PHYSICAL REVIEW LETTERS, 1980, 44 (19) :1267-1271