RESISTIVITY CURVES FOR SUBSURFACE DIFFUSED LAYERS IN SILICON

被引：1

作者：

BULUCEA, C

机构：

[1] Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期

关键词：

D O I：

10.1016/0038-1101(94)00117-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Average resistivity curves are calculated for subsurface diffused layers in silicon using the updated resistivity-concentration data available for boron- and phosphorus-doped bulk silicon. This complements a recent paper of the author on full-depth diffused profiles, making up a complete equivalent of Irvin's original set. An improved representation format is used, which decompresses the resistivity scale and also reduces to half the total number of graphs involved in average resistivity calculations.

引用

页码：367 / 375

页数：9

共 7 条

[1] RECALCULATION OF IRVIN RESISTIVITY CURVES FOR DIFFUSED LAYERS IN SILICON USING UPDATED BULK RESISTIVITY DATA [J].