LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

Luminescence from strained Si1-xGex/Si quantum wells (QWs) grown on Si substrates by Si molecular-beam epitaxy was studied. Influenece of the crystal quality on the luminescence efficiency was investigated by excitation dependence of luminescence intensity. Electroluminescence (EL) from coupled double QWs for the material system and the associated peak red shift is presented for the first time. Transverse-electric-polarized EL was observed from cleaved edge samples for the first time, showing that the optical transition in QW luminescence is due to electron-heavy hole recombination.