NITROGEN-CONTENT OF OXYNITRIDE FILMS ON SI(100)

被引：37

作者：

TANG, HT ^{[1
]}

LENNARD, WN ^{[1
]}

ZINKEALLMANG, M ^{[1
]}

MITCHELL, IV ^{[1
]}

FELDMAN, LC ^{[1
]}

GREEN, ML ^{[1
]}

BRASEN, D ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absolute nitrogen concentration in SiO(x)N(y)/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction N-14(d,alpha)C-12 provides more accurate depth profiles of N-14 due to the quantitative nature-of the technique and its high sensitivity, approximately 6.0 X 10(13) atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within less than or similar 2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.

引用

页码：3473 / 3475

页数：3

共 15 条

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