DECAY KINETICS OF PERSISTENT PHOTOCONDUCTIVITY IN SEMICONDUCTORS

[1] PERSISTENT PHOTOCONDUCTIVITY IN A-SI-H/A-SINX-H LAYERED STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5547 - 5550

[2] BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 764 - 766

[3] A TUNNELING MODEL FOR THE DECAY OF LUMINESCENCE IN INORGANIC PHOSPHORS - THE CASE OF ZN2SIO4-MN [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (08) : 4347 - 4355

[4] BIRRITTELA MS, 1984, IEEE T ELECTRON DEV, V29, P1135

[5] INFLUENCE OF CLUSTERING ON THE MOBILITY OF III-V SEMICONDUCTOR ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1866 - 1868

[6] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1109 - 1118

[7] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 111 - 124

[8] CHIN AK, 1982, J ELECTROCHEM SOC, V129, P2388

[9] EFFECTIVE MEDIUM THEORY FOR HALL-EFFECT IN DISORDERED MATERIALS [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (15) : 696 - 698

[10] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 857 - 861

[1] PERSISTENT PHOTOCONDUCTIVITY IN A-SI-H/A-SINX-H LAYERED STRUCTURES [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5547 - 5550

[2] BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 764 - 766

[3] A TUNNELING MODEL FOR THE DECAY OF LUMINESCENCE IN INORGANIC PHOSPHORS - THE CASE OF ZN2SIO4-MN [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (08) : 4347 - 4355

[4] BIRRITTELA MS, 1984, IEEE T ELECTRON DEV, V29, P1135

[5] INFLUENCE OF CLUSTERING ON THE MOBILITY OF III-V SEMICONDUCTOR ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1866 - 1868

[6] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1109 - 1118

[7] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) : 111 - 124

[8] CHIN AK, 1982, J ELECTROCHEM SOC, V129, P2388

[9] EFFECTIVE MEDIUM THEORY FOR HALL-EFFECT IN DISORDERED MATERIALS [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (15) : 696 - 698

[10] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 857 - 861