BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE

被引：14

作者：

ARNOLD, D

KLEM, J

HENDERSON, T

MORKOC, H

ERICKSON, LP

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] PERKIN ELMER,DIV PHYS ELECTR,EDEN PRAIRIE,MN 55344

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：764 / 766

页数：3

共 17 条

[1] REDUCTION OF BACKGATING IN GAAS/ALGAAS MESFETS BY OPTIMIZATION OF ACTIVE-LAYER BUFFER-LAYER INTERFACE
ARNOLD, D
FISCHER, R
KLEM, J
PONSE, F
MORKOC, H
[J]. ELECTRONICS LETTERS, 1984, 20 (09) : 376 - 378
[2] THE EFFECT OF BACKGATING ON THE DESIGN AND PERFORMANCE OF GAAS DIGITAL INTEGRATED-CIRCUITS
BIRRITTELLA, MS
SEELBACH, WC
GORONKIN, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) : 1135 - 1142
[3] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS
CHANG, MF
LEE, CP
HOU, LD
VAHRENKAMP, RP
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 869 - 871
[4] DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051
[5] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
DELAGEBEAUDEUF, D
LINH, NT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
[6] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[7] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
DRUMMOND, TJ
MORKOC, H
LEE, K
SHUR, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341
[8] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS
DRUMMOND, TJ
KOPP, W
THORNE, RE
FISCHER, R
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881
[9] BACKGATING AND LIGHT SENSITIVITY IN ION-IMPLANTED GAAS INTEGRATED-CIRCUITS
GORONKIN, H
BIRRITTELLA, MS
SEELBACH, WC
VAITKUS, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (05) : 845 - 850
[10] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS
ITOH, T
YANAI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1037 - 1045

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