REDUCTION OF BACKGATING IN GAAS/ALGAAS MESFETS BY OPTIMIZATION OF ACTIVE-LAYER BUFFER-LAYER INTERFACE

被引：4

作者：

ARNOLD, D ^{[1
]}

FISCHER, R ^{[1
]}

KLEM, J ^{[1
]}

PONSE, F ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 09期

关键词：

D O I：

10.1049/el:19840260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：376 / 378

页数：3

共 13 条

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[6]

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[7]

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[9]

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[10] CHARACTERISTICS OF SUB-MICRON GATE GAAS-FETS WITH AL0.3GA0.7AS BUFFERS - EFFECTS OF INTERFACE QUALITY [J].

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SU, SL .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :46-48

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