A FLOW CHANNEL REACTOR FOR GAAS VAPOR-PHASE EPITAXY

被引：15

作者：

WESTPHAL, GH

SHAW, DW

HARTZELL, RA

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(82)90450-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：324 / 331

页数：8

共 7 条

[1]

Chandrasekhar S., 1961, HYDRODYNAMIC HYDROMA

[2] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

EFFER, D .

[3] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J].

FINCH, WF ;

MEHAL, EW .

[4] COMPUTATIONAL SIMULATION OF MELT FLOW DURING CZOCHRALSKI GROWTH [J].

KOBAYASHI, N .

[5] COMPARATIVE THERMODYNAMIC ANALYSIS OF INP AND GAAS DEPOSITION [J].

SHAW, DW .

SHAW, DW .

[7]

SHAW DW, 1975, CHEM VAPOR DEPOSIT A