REFRACTIVE-INDEX PROFILES INDUCED BY ION-IMPLANTATION INTO SILICA

被引：70

作者：

WEBB, AP ^{[1
]}

TOWNSEND, PD ^{[1
]}

机构：

[1] UNIV SUSSEX,SCH MATH & PHYS SCI,BRIGHTON BN1 9QH,SUSSEX,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 09期

关键词：

D O I：

10.1088/0022-3727/9/9/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1343 / 1354

页数：12

共 52 条

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[3]

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[4] ELLIPSOMETRIC ANALYSIS OF REFRACTIVE-INDEX PROFILES PRODUCED BY ION-IMPLANTATION IN SILICA GLASS [J].

BAYLY, AR ;

TOWNSEND, PD .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1973, 6 (09) :1115-1128

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EERNISSE, EP .

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APPLIED OPTICS, 1970, 9 (01) :236-&

[7] THIN-FILM WAVEGUIDE DEVICES [J].

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APPLIED PHYSICS, 1975, 6 (01) :1-19

[8] RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3 [J].

CHU, WK ;

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ZIEGLER, JF .

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[9]

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[10]

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