INGAAS/INP MESA PHOTODETECTOR PASSIVATED WITH SILICON DIOXIDE

被引：8

作者：

ANTELL, GR ^{[1
]}

MURISON, RF ^{[1
]}

机构：

[1] STC COMPONENTS LTD,PAIGNTON TQ4 7BE,DEVON,ENGLAND

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 22期

关键词：

D O I：

10.1049/el:19840625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：919 / 920

页数：2

相关论文

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[2] Nickel H., 1983, Journal of Optical Communications, V4, P63, DOI 10.1515/JOC.1983.4.2.63
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[5] POLYIMIDE PASSIVATION OF IN0.53GA0.47AS, INP, AND INGAASP/INP PARA-NORMAL-JUNCTION STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 145 - 147