LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF DOPED GE

被引：10

作者：

CHEN, M ^{[1
]}

SMITH, DL ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.15.4983

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4983 / 4996

页数：14

共 38 条

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[2]

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[3] ELECTRON-HOLE DROPS IN DOPED GE [J].

BENOITAL.C ;

VOOS, M .

[4] ELECTRON-HOLE LIQUID IN HEAVILY DOPED N-TYPE GE AND SI [J].

BERGERSEN, B ;

JENA, P ;

BERLINSKY, AJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (09) :1377-1386

[5]

CHEN MH, TO BE PUBLISHED

[6]

CHEN MS, UNPUBLISHED

[7]

CHRISTENSEN O, 1974, 12 P INT C PHYS SEM, P56

[8]

FISTUL VI, 1969, HEAVILY DOPED SEMICO, P24

[9]

Gross E. F., 1972, Soviet Physics - Solid State, V14, P368

HAYNES, JR .