学术探索
学术期刊
新闻热点
数据分析
智能评审

QUANTITATIVE VOLTAGE-DEPENDENT STM IMAGE SIMULATIONS FOR SEMICONDUCTORS

被引：21
作者：
WILSON, JH
MCINNES, DA
KNALL, J
SUTTON, AP
PETHICA, JB
机构：
[1] Department of Materials, Oxford University, Oxford, OX1 3PH, Parks Road
来源：
ULTRAMICROSCOPY | 1992年 / 42卷 / Part A期
关键词：
D O I：
10.1016/0304-3991(92)90361-M
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
We present simulations of voltage-dependent STM images for the Si(113)3x2 surface using a simple tight-binding description of surface electronic structure. Quantitative agreement with experiment is obtained. Our approach is particularly well suited for complex structures which present difficulties for more exact calculations. The local barrier for tunnelling electrons is shown to have an important effect on the interpretation of STM images.
引用
收藏
页码：801 / 808
页数：8
相关论文
共 16 条
12